fm radio band tuning application. features high capacitance ratio : c 2v /c 9v =3.7 5.0 low r s : r s =0.5 u (max.). small package. maximum rating (ta=25 1 ) dim millimeters 1. anode 1 2. anode 2 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ 1998. 7. 24 1/2 semiconductor technical data KDV1430 variable capacitance diode silicon epitaxial planar diode revision no : 0 electrical characteristics (ta=25 1 ) classification of capacitance ratio grade characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 16 - - v reverse current i r v r =10v - - 100 na capacitance c 2v v r =2v, f=1mhz 69.14 - 77.43 pf c 4v v r =4v, f=1mhz 43.09 - 56.24 c 6v v r =6v, f=1mhz 25.05 - 34.57 c 9v v r =9v, f=1mhz 15.44 - 20.1 capacitance ratio k c 2v /c 9v , f=1mhz 3.7 - 5.0 series resistance r s v r =2v, f=70mhz - - 0.5 u grade capacitance (c 2v ) unit a 69.14 71.23 pf b 71.09 73.24 c 73.09 75.31 d 75.15 77.43 characteristic symbol rating unit reverse voltage v r 18 v junction temperature t j 150 1 storage temperature range t stg -55 150 1 grade type name marking lot no. l3
KDV1430 2/2 1998. 7. 24 revision no : 0 1.05 3 2 1 0 v (v) r r v - r reverse voltage v (v) 1234 200 c (pf) 100 c - v r 10 30 56789 0 f=1mhz ta=25 c r 10f 6 4 2 0 v (v) r i - v rr i (a) 810 100f 1p 12 14 16 100p 1n 10p ta=85 c ta=55 c ta=25 c q v (v) 0 10 1 r 3 2456 500 100 50 q - v r 789 ta=25 c f=50mhz f=70mhz f= 10 0 mhz f - r f (mhz) 300 100 0.2 s r s 50 500 0.4 0.6 v =2v ta=25 c ( ? ) r c(ta) c(25 c) 0.95 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 456789 c(25 c) c(ta) ta=85 c ta=55 c ta=25 c ta=-15 c ta=-55 c v - (ppm/ c) r v (v) 0 temperature coefficient (ppm/ c) 100 r 246810 300 1000 ta=55 c~+85 c f=1mhz f=1mhz
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